Doç. Dr. Nihat TUĞLUOĞLU

ÖZGEÇMİŞ
Doç.Dr. NİHAT TUĞLUOĞLU
TC Kimlik No /
Pasaport No:
34085051220
Doğum Yılı:
1969
Yazışma Adresi :
Demetgül mah. 413. sokak 82/7 Demetevler
Ankara/Türkiye
06200
Telefon :
e-posta :
[email protected]
EĞİTİM BİLGİLERİ
Fakülte/Enstitü
Öğrenim Alanı
Mezuniyet
Yılı
Ülke
Üniversite
Türkiye
Ankara
Üniversitesi
FEN
FAKÜLTESİ
KATIHAL FİZİĞİ
Türkiye
Ankara
Üniversitesi
FEN
FAKÜLTESİ
KATIHAL FİZİĞİ Yüksek
Lisans
1994
Türkiye
Ankara
Üniversitesi
Mühendislik
Fakültesi
FİZİK
MÜHENDİSLİĞİ
1991
Derece
Doktora 1999
Lisans
AKADEMİK/MESLEKTE DENEYİM
Kurum/Kuruluş
Giresun
Üniversitesi
Ülke
Şehir
Bölüm/Birim
Görev
Türü
Görev
Dönemi
Türkiye Giresun
Enerji Sistemleri
Mühendisliği
Doç. Dr. 2015-
TAEK Ankara
Nükleer Araştırma
Türkiye Ankara
ve Eğitim Merkezi
(ANAEM)
Nükleer
Elektronik ve
Enstrümantasyon
Birimi
Teknik
1992Personel 2015
UZMANLIK ALANLARI
Uzmanlık Alanları
Yarıiletken devre elemanlarının karakterizasyonu, Güneş pilleri, İnce Filmler,
Optik Özellikler, Heterojen yapıların karakterizasyonu
MS ve MIS(MOS) yapılar, Schottky diyot, Dielektrik özellikler
Proje Adı
Aynı şartlar
Kurum
Gazi
PROJE DENEYİMİ
Bütçe
Tarih
5000
Görev
Proje Türü
01.06.2013- Araştırmacı/Uzman Ulusal
altında üretilen
özdeş Au/n-Si
(100) Schottky
diyotlarda
karakteristik
parametrelerin
belirlenmesi
Üniversitesi
01.06.2014
Silisyum tabanlı
Schottky
diyotlarının
üretimi ve
elektriksel
karakterizasyonu
Giresun
Üniversitesi
15000
01.01.2012Araştırmacı/Uzman Ulusal
01.01.2013
Çok Amaçlı
Yüksek
Hassasiyetli
Radyasyon
Dedektörü
(HIPRAD)
Üretimi
Türkiye
Atom
Enerjisi
Kurumu
600000
01.01.2009Araştırmacı/Uzman Uluslararası
01.01.2014
Silisyum
Yüzeylerine
Kaplanan İnce
Filmlerin
Kalınlığının ve
Yüzey
Pürüzlülüğünün
AFM İle
İncelenmesi
TAEK
Türkiye
Atom
Enerjisi
Kurumu
20000
Sarayköy
Nükleer
Araştırma ve
Eğitim
Merkezi
01.01.2000Araştırmacı/Uzman Ulusal
01.01.2002
TAEK
Türkiye
Elektron
Atom
Hızlandırıcılarının Enerjisi
Çevre ve
Kurumu
50000
Malzeme
Sarayköy
Bilimindeki
Nükleer
Uygulamaları
Araştırma ve
Eğitim
Merkezi
01.01.1999Araştırmacı/Uzman Ulusal
01.01.2004
Yoğunluk
Fonksiyoneli
Formalizminde
Metallerin Taban
Durumu
Özelliklerinin
Belirlenmesi
01.01.1998Araştırmacı/Uzman Ulusal
01.01.1999
TÜBİTAK
Başkanlık
20000
Yarıiletken
Yapılarda
Radyasyonun ve
Yüzey Şartlarının
Yapının
Elektroniksel
İletkeliğine Etkisi
Aktif ve Pasif
Optoelektronik
Devre
Elemanlarının
Radyasyonla
Etkileşmesi
(D.7.1.1.) Silikon
Tabanlı Devre
Elemanları
TAEK
Türkiye
Atom
Enerjisi
Kurumu
20000
Sarayköy
Nükleer
Araştırma ve
Eğitim
Merkezi
01.01.1998Araştırmacı/Uzman Ulusal
01.01.2000
TAEK
Türkiye
Atom
Enerjisi
Kurumu
30000
Sarayköy
Nükleer
Araştırma ve
Eğitim
Merkezi
01.01.1995Araştırmacı/Uzman Ulusal
01.01.1997
DİĞER AKADEMİK FAALİYETLER
Son Bir Yılda Uluslararası İndekslere Kayıtlı Makale/Derleme İçin
Yapılan Danışmanlık Sayısı
Son Bir Yılda Projeler İçin Yapılan Danışmanlık Sayısı
5
Yayınlara Alınan Toplam Atıf Sayısı
485
Tamamlanan
Danışmanlık Yapılan Öğrenci Sayısı
12
Yüksek
Lisans
Doktora
Devam
Eden
3
1
Uzmanlık
Diğer Faaliyetler
(Eser/görev/faaliyet/sorumluluk/olay/üyelik
vb.)
Ödülün Adı
ÖDÜLLER
Alındığı Kuruluş
Yılı
YAYINLARI
SCI, SSCI, AHCI indekslerine giren dergilerde yayınlanan makaleler
Tugluoglu, Nihat; Karadeniz, Serdar; Baris, Behzad, Analysis of relaxation
time and density of interface trap on perylene-diimide (PDI)/p-Si (100)
Schottky diodes, 2015, MATERIALS SCIENCE IN SEMICONDUCTOR
PROCESSING
Koralay, Haluk; Tugluoglu, Nihat; Akgul, Kubra Bengin; Cavdar, Sukru,
Analysis of the Homogeneous Interface State Density of Identically Prepared
Schottky Structures with Nano-Size Oxide Layer by Hill-Coleman Method,
2015, JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
Tugluoglu, N.; Caliskan, F.; Yuksel, O. F., Analysis of inhomogeneous barrier
and capacitance parameters for Al/rubrene/n-GaAs (100) Schottky diodes,
2015, SYNTHETIC METALS
Tugluoglu, Nihat; Karadeniz, Serdar; Baris, Behzad, Electrical modulus and
dielectric spectroscopy behavior of spin coated perylene-monoimide
semiconductor films, 2014, MATERIALS SCIENCE IN SEMICONDUCTOR
PROCESSING
Karadeniz, S.; Tugluoglu, N., Isothermal annealing time effects on dielectric
parameters of Au/SnO2/n-Si/Al structure, 2014, JOURNAL OF
OPTOELECTRONICS AND ADVANCED MATERIALS
Baris, Behzad; Ozdemir, Hatice Gurel; Tugluoglu, Nihat; Karadeniz, Serdar;
Yuksel, Omer Faruk; Kisnisci, Zeynep, Optical dispersion and dielectric
properties of rubrene organic semiconductor thin film, 2014, JOURNAL OF
MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Tugluoglu, Nihat; Baris, Behzad; Gurel, Hatice; Karadeniz, Serdar; Yuksel,
Omer Faruk, Investigation of optical band gap and device parameters of
rubrene thin film prepared using spin coating technique, 2014, JOURNAL OF
ALLOYS AND COMPOUNDS
Yuksel, O. F.; Tugluoglu, N.; Gulveren, B.; Safak, H.; Kus, M., Electrical
properties of Au/perylene-monoimide/p-Si Schottky diode, 2013, JOURNAL
OF ALLOYS AND COMPOUNDS
Baris, Behzad; Yuksel, Omer Faruk; Tugluoglu, Nihat; Karadeniz, Serdar,
Double barrier heights in 5,6,11,12-tetraphenylnaphthacene (rubrene) based
organic Schottky diode, 2013, SYNTHETIC METALS
Tugluoglu, N.; Yuksel, O. F.; Karadeniz, S.; Safak, H., Frequency dependent
interface state properties of a Schottky device based on perylene-monoimide
deposited on n-type silicon by spin coating technique, 2013, MATERIALS
SCIENCE IN SEMICONDUCTOR PROCESSING
Yuksel, O. F.; Tugluoglu, N.; Safak, H.; Nalcacigil, Z.; Kus, M.; Karadeniz, S.,
Analysis of temperature dependent electrical properties of Au/perylenediimide/n-Si Schottky diodes, 2013, THIN SOLID FILMS
Karadeniz, S.; Baris, B.; Yuksel, O. F.; Tugluoglu, N., Analysis of electrical
properties of Al/p-Si Schottky contacts with and without rubrene layer, 2013,
SYNTHETIC METALS
Yuksel, O. F.; Tugluoglu, N.; Safak, H.; Kus, M., The modification of Schottky
barrier height of Au/p-Si Schottky devices by perylene-diimide, 2013,
JOURNAL OF APPLIED PHYSICS
Tugluoglu, Nihat; Yuksel, O. Faruk; Safak, Haluk; Karadeniz, Serdar, The
double Gaussian distribution of inhomogeneous barrier heights in the organicon-inorganic Schottky devices, 2012, PHYSICA STATUS SOLIDI AAPPLICATIONS AND MATERIALS SCIENCE
Tugluoglu, N.; Karadeniz, S., Analysis of current-voltage and capacitancevoltage characteristics of perylene-monoimide/n-Si Schottky contacts, 2012,
CURRENT APPLIED PHYSICS
Tugluoglu, N.; Karadeniz, S.; Selcuk, A. Birkan; Ocak, S. Bilge, Effect of
oxide thickness on the capacitance and conductance characteristics of MOS
structures, 2007, PHYSICA B-CONDENSED MATTER
Selcuk, A. Birkan; Tugluoglu, N.; Karadeniz, S.; Ocak, S. Bilge, Analysis of
frequency-dependent In/SiO2/P-Si series resistance and interface states of
(MIS) structures, 2007, PHYSICA B-CONDENSED MATTER
Karadeniz, S.; Selcuk, A. Birkan; Tugluoglu, N.; Ocak, S. Bilge, On the
interface trap density and series resistance of tin oxide film prepared on n-type
Si(111) substrate: Frequency dependent effects before and after (CO)-C-60
gamma-ray irradiation, 2007, NUCLEAR INSTRUMENTS & METHODS IN
PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH
MATERIALS AND ATOMS
Yakuphanoglu, F.; Tugluoglu, Nihat; Karadeniz, S., Space charge-limited
conduction in Ag/p-Si Schottky diode, 2007, PHYSICA B-CONDENSED
MATTER
Tugluoglu, N.; Yakuphanoglu, F.; Karadeniz, S., Determination of the interface
state density of the In/p-Si Schottky diode by conductance and capacitancefrequency characteristics, 2007, PHYSICA B-CONDENSED MATTER
Tugluoglu, N., Co-60 gamma-ray irradiation effects on the interface traps
density of tin oxide films of different thicknesses on n-type Si(111) substrates,
2007, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH
SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Serin, T; Serin, N; Karadeniz, S; Sari, H; Tugluoglu, N; Pakma, O, Electrical,
structural and optical properties of SnO2 thin films prepared by spray
pyrolysis, 2006, JOURNAL OF NON-CRYSTALLINE SOLIDS
Cavdar, S; Koralay, H; Tugluoglu, N; Gunen, A, Frequency-dependent
dielectric characteristics of Tl-Ba-Ca-Cu-O bulk superconductor, 2005,
SUPERCONDUCTOR SCIENCE & TECHNOLOGY
Acar, S; Kasap, M; Isik, BY; Ozcelik, S; Tugluoglu, N; Karadeniz, S,
Quantitative mobility spectrum analysis for determination of electron and
magneto transport properties of Te-doped GaSb, 2005, CHINESE PHYSICS
LETTERS
Karadeniz, S; Tugluoglu, N; Sahin, M; Safak, H, Series resistance calculation
for Ag contacts on single crystal layered p-SnS and p-SnSe compound
semiconductors in the wide temperature range, 2005, MICROELECTRONIC
ENGINEERING
Karadeniz, S; Tugluoglu, N; Serin, T; Serin, N, The energy distribution of the
interface state density of SnO2/p-Si(111) heterojunctions prepared at different
substrate temperatures by spray deposition method, 2005, APPLIED
SURFACE SCIENCE
Kasap, M; Acar, S; Ozcelik, S; Karadeniz, S; Tugluoglu, N, Temperaturedependent galvanomagnetic measurements on doped InSb and InAs grown by
liquid encapsulated Czochralski, 2005, CHINESE PHYSICS LETTERS
Sahin, M; Safak, H; Tugluoglu, N; Karadeniz, S, Temperature dependence of
current-voltage characteristics of Ag/p-SnS Schottky barrier diodes, 2005,
APPLIED SURFACE SCIENCE
Tugluoglu, N; Karadeniz, S; Altindal, S, Effect of series resistance on the
performance of silicon Schottky diode in the presence of tin oxide layer, 2005,
APPLIED SURFACE SCIENCE
Karadeniz, S; Sahin, M; Tugluoglu, N; Safak, H, Temperature-dependent
barrier characteristics of Ag/p-SnS Schottky barrier diodes, 2004,
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Tugluoglu, N; Karadeniz, S; Acar, S; Kasap, M, Temperature-dependent
barrier characteristics of inhomogeneous in/p-Si (100) Schottky barrier diodes,
2004, CHINESE PHYSICS LETTERS
Tugluoglu, N; Altindal, S; Tataroglu, A; Karadeniz, S, Dielectric properties in
Au/SnO2/n-Si (MOS) structures irradiated under Co-60-gamma rays, 2004,
MICROELECTRONICS JOURNAL
Tugluoglu, N; Karadeniz, S; Sahin, M; Safak, H, Temperature-dependent
barrier characteristics of Ag/p-SnSe Schottky diodes based on I-V-T
measurements, 2004, SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Acar, S; Karadeniz, S; Tugluoglu, N; Selcuk, AB; Kasap, M, Gaussian
distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier
diodes, 2004, APPLIED SURFACE SCIENCE
Tugluoglu, N; Karadeniz, S; Sahin, M; Safak, H, Temperature dependence of
current-voltage characteristics of Ag/p-SnSe Schottky diodes, 2004, APPLIED
SURFACE SCIENCE
Karadeniz, S; Tugluoglu, N; Serin, T, Substrate temperature dependence of
series resistance in A1/SnO2/p-Si (111) Schottky diodes prepared by spray
deposition method, 2004, APPLIED SURFACE SCIENCE
Tataroglu, A; Altindal, S; Karadeniz, S; Tugluoglu, N, Au/SnO2/n-Si (MOS)
structures response to radiation and frequency, 2003, MICROELECTRONICS
JOURNAL
Altindal, S; Karadeniz, S; Tugluoglu, N; Tataroglu, A, The role of interface
states and series resistance on the I-V and C-V characteristics in Al/SnO2/p-Si
Schottky diodes, 2003, SOLID-STATE ELECTRONICS
Tugluoglu, N; Peder, M; Mutlu, RH, Structural stability and specific-heat
coefficient of Yb, 1999, PHYSICS LETTERS A
Tugluoglu, N; Mutlu, RH, Effect of zero-point corrections and k-point
sampling on the structural stability determinations of alkali metals (vol 54, pg
10253, 1996), 1997, PHYSICAL REVIEW B
Peder, M; Mutlu, RH; Tugluoglu, N, Calculated specific-heat coefficients of
nonmagnetic closed-packed metals, 1997, PHYSICAL REVIEW B
Tugluoglu, N; Mutlu, RH, Effect of zero-point corrections and k-point
sampling on the structural stability determinations of alkali metals, 1996,
PHYSICAL REVIEW B
Diğer dergilerde yayınlanan makaleler
Hakemli konferans/sempozyumların bildiri kitaplarında yer alan yayınlar
Temperature Dependence of Current-Voltage Characteristics of Al/rubrene/nGaAs (100) Schottky Barrier Diodes, International Semiconductor Science and
Technology Conference 2015" (ISSTC-2015), 2015
Analysis of electrical properties of numerous Schottky junctions prepared on
silicon substrate, Turkish Physical Society 31th International Physics Congress,
TFD-31, 2014
Dielectric spectroscopy studies in Au/PMI/p-Si Schottky diodes, International
Workshop on Flexible Bio- and Organic Printed Electronics (IWOBOE 2014),
2014
Determination of the interface state density distribution of Au/PDI/n-Si
Schottky diodes using C-V-f and G-V-f techniques, International Workshop on
Flexible Bio- and Organic Printed Electronics (IWOBOE 2014), 2014
Dielectric and ac conductivity properties of perylene-monoimide layer prepared
by using spin coating method on n-type Si (100) substrate, International
Semiconductor Science & Technology Conference (ISSTC-2014), 2014
Effect of isothermal annealing time on electrical properties of Schottky diodes
based on tin oxide film prepared by spin coating technique, ?, International
Semiconductor Science & Technology Conference (ISSTC- 2014), 2014
Electrical properties of Al/CZTSe nanocrystal Schottky diode, International
Semiconductor Science & Technology Conference (ISSTC-2014), 2014
Investigation of some optical parameters of Rubrene thin film, Turkish Physical
Society 30th International Physics Congress, TFD-30, 2013
Optical dielectric and conductivity properties of 5,6,11,12
tetraphenylnaphthacene thin films, Turkish Physical Society 30th International
Physics Congress, TFD-30, 2013
Inhomogeneous barrier analysis of Al/Rubrene/p-Si Schottky diodes over a
wide temperature range, 3rd International Advances in Applied Physics &
Materials Sciences ?APMAS2013, 2013
Frequency dependent C-V and G-V characteristics of Au/perylene-
monoimide/n-Si Schottky diodes, 2nd International Advances in Applied
Physics & Materials Sciences ?APMAS2012, 2012
Gaussian distribution of inhomogeneous barrier height in perylenemonoimide/n-Si (100) Schottky diodes, 2nd International Advances in Applied
Physics & Materials Sciences ?APMAS2012, 2012
Diğer yayınlar
Düzenleme Tarihi :28/07/2015